The race to shrink semiconductor nodes just crossed a defining threshold. This week, imec announced a breakthrough in single-patterning high-NA EUV lithography, achieving 20nm pitch line structures with 13nm tip-to-tip dimensions for damascene metallization. Even more remarkable, they demonstrated ruthenium lines at 20nm and 18nm pitch using a direct metal etch (DME) process, with a 100% electrical test yield for the 20nm pitch structures. Presented at the 2025 SPIE Photomask Technology + EUV Lithography Conference, these results mark a critical step toward enabling sub-2nm logic nodes—an advancement with profound implications for audio processing chips, where power efficiency and signal integrity are paramount.